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Persistent Recurrent Memory Between Transformer Layers Improves Language Model Generalization

简体中文

L1 topology reference kernel; no full TinyStories training curves.

Paper information

Field Details
Paper Persistent Recurrent Memory Between Transformer Layers Improves Language Model Generalization
Institution FITec Labs / Ericsson São Paulo (first author).
First public release 2026-09-15 (arXiv v1)
Author code No public author repository found as of 2026-09-16.
Local adapter or method key persistent-recurrent-memory
Local reproduction code src/auto_research/foundation_latest_20260916_followup.py

Paper method and evidence

Insert an observe–GRU update–gated influence state path between the lower and upper Transformer halves, so recurrent memory affects later computation.

flowchart LR
  L[Lower Transformer layers] --> O[Observe hidden state]
  O --> R[GRU updates persistent memory]
  R --> G[Gate influence on upper layers]

Original paper figure

Persistent Recurrent Memory Between Transformer Layers Improves Language Model Generalization paper figure

Figure 1 shows the recurrent path between Transformer stages. From the original paper; copyright remains with the authors.

Core equation

The reference preserves the state transition and gate and exposes auditable statistics.

Reported results

Paper accuracy, speed, training losses and benchmarks are not local results.

Local reproduction

Three-seed mechanism results are diagnostic_only=true. Fixed-budget fixtures verify the defining operator and auditable intermediate states; they are not a benchmark, production result, or capability-ranking entry.